: | TJ80S04M3L(T6L1,NQ |
---|---|
: | Transistors |
: | Toshiba |
: | Trans MOSFET P- |
: | - |
: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
: | YES |
TYPE | DESCRIPTION |
Manufacturer Part Number: | TJ80S04M3L(T6L1,NQ |
Part Life Cycle Code: | Active |
Ihs Manufacturer: | TOSHIBA CORP |
Package Description: | SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code: | unknown |
Factory Lead Time: | 12 Weeks |
Manufacturer: | Toshiba America Electronic Components |
Risk Rank: | 5.69 |
Avalanche Energy Rating (Eas): | 148 mJ |
Case Connection: | DRAIN |
Configuration: | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min: | 40 V |
Drain Current-Max (Abs) (ID): | 80 A |
Drain Current-Max (ID): | 80 A |
Drain-source On Resistance-Max: | 0.0079 Ω |
FET Technology: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 Code: | R-PSSO-G2 |
Number of Elements: | 1 |
Number of Terminals: | 2 |
Operating Mode: | ENHANCEMENT MODE |
Package Body Material: | PLASTIC/EPOXY |
Package Shape: | RECTANGULAR |
Package Style: | SMALL OUTLINE |
Polarity/Channel Type: | P-CHANNEL |
Power Dissipation-Max (Abs): | 100 W |
Pulsed Drain Current-Max (IDM): | 160 A |
Reference Standard: | AEC-Q101 |
Surface Mount: | YES |
Terminal Form: | GULL WING |
Terminal Position: | SINGLE |
Transistor Application: | SWITCHING |
Transistor Element Material: | SILICON |
1
2.4994
2.4994
10
2.3769
23.769
100
2.2444
224.44
500
2.1219
1060.95
1000
1.9995
1999.5