| ： | VMMK-1218-TR1G |
|---|---|
| ： | 射频晶体管 |
| ： | Avago |
| ： | 0.5 to 18 GHz L |
| ： | - |
| ： | 0402 (1005 Metric) |
| ： | YES |
| TYPE | DESCRIPTION |
| Manufacturer Part Number: | VMMK-1218-TR1G |
| Rohs Code: | Yes |
| Part Life Cycle Code: | Obsolete |
| Ihs Manufacturer: | BROADCOM INC |
| Package Description: | CHIP CARRIER, R-XBCC-N3 |
| Reach Compliance Code: | compliant |
| ECCN Code: | EAR99 |
| HTS Code: | 8542.33.00.01 |
| Manufacturer: | Broadcom Limited |
| Risk Rank: | 5.81 |
| Case Connection: | SOURCE |
| Configuration: | SINGLE |
| DS Breakdown Voltage-Min: | 5 V |
| Drain Current-Max (Abs) (ID): | 0.1 A |
| Drain Current-Max (ID): | 0.1 A |
| FET Technology: | HIGH ELECTRON MOBILITY |
| Highest Frequency Band: | KU BAND |
| JESD-30 Code: | R-XBCC-N3 |
| JESD-609 Code: | e3 |
| Moisture Sensitivity Level: | 1 |
| Number of Elements: | 1 |
| Number of Terminals: | 3 |
| Operating Mode: | ENHANCEMENT MODE |
| Package Body Material: | UNSPECIFIED |
| Package Shape: | RECTANGULAR |
| Package Style: | CHIP CARRIER |
| Peak Reflow Temperature (Cel): | 260 |
| Polarity/Channel Type: | N-CHANNEL |
| Power Dissipation Ambient-Max: | 0.3 W |
| Power Gain-Min (Gp): | 6.7 dB |
| Qualification Status: | Not Qualified |
| Subcategory: | FET RF Small Signal |
| Surface Mount: | YES |
| Terminal Finish: | Matte Tin (Sn) |
| Terminal Form: | NO LEAD |
| Terminal Position: | BOTTOM |
| [email protected] Reflow Temperature-Max (s): | 40 |
| Transistor Application: | AMPLIFIER |
| Transistor Element Material: | GALLIUM ARSENIDE |
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