| ： | SI5404BDC-T1-GE3 |
|---|---|
| ： | 射频晶体管 |
| ： | Vishay Siliconix |
| ： | MOSFET N-CH 20V |
| ： | - |
| ： | 8-SMD, Flat Lead |
| ： | YES |
| TYPE | DESCRIPTION |
| Manufacturer Part Number: | SI5404BDC-T1-GE3 |
| Pbfree Code: | Yes |
| Rohs Code: | Yes |
| Part Life Cycle Code: | Obsolete |
| Ihs Manufacturer: | VISHAY SILICONIX |
| Package Description: | SMALL OUTLINE, R-XDSO-C8 |
| Pin Count: | 8 |
| Reach Compliance Code: | unknown |
| ECCN Code: | EAR99 |
| Manufacturer: | Vishay Siliconix |
| Risk Rank: | 5.7 |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min: | 20 V |
| Drain Current-Max (Abs) (ID): | 5.4 A |
| Drain Current-Max (ID): | 5.4 A |
| Drain-source On Resistance-Max: | 0.028 Ω |
| FET Technology: | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code: | R-XDSO-C8 |
| JESD-609 Code: | e3 |
| Moisture Sensitivity Level: | 1 |
| Number of Elements: | 1 |
| Number of Terminals: | 8 |
| Operating Mode: | ENHANCEMENT MODE |
| Operating Temperature-Max: | 150 °C |
| Package Body Material: | UNSPECIFIED |
| Package Shape: | RECTANGULAR |
| Package Style: | SMALL OUTLINE |
| Peak Reflow Temperature (Cel): | 260 |
| Polarity/Channel Type: | N-CHANNEL |
| Power Dissipation-Max (Abs): | 2.5 W |
| Pulsed Drain Current-Max (IDM): | 20 A |
| Qualification Status: | Not Qualified |
| Subcategory: | FET General Purpose Powers |
| Surface Mount: | YES |
| Terminal Finish: | Matte Tin (Sn) |
| Terminal Form: | C BEND |
| Terminal Position: | DUAL |
| [email protected] Reflow Temperature-Max (s): | 40 |
| Transistor Element Material: | SILICON |
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