| ： | SI4463BDY-T1-GE3 |
|---|---|
| ： | RF Transistors |
| ： | Vishay |
| ： | Trans MOSFET P- |
| ： | - |
| ： | 8-SOIC (0.154", 3.90mm Width) |
| ： | YES |
| TYPE | DESCRIPTION |
| Manufacturer Part Number: | SI4463BDY-T1-GE3 |
| Rohs Code: | Yes |
| Part Life Cycle Code: | Not Recommended |
| Ihs Manufacturer: | VISHAY INTERTECHNOLOGY INC |
| Package Description: | HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8 |
| Reach Compliance Code: | compliant |
| ECCN Code: | EAR99 |
| Factory Lead Time: | 12 Weeks |
| Manufacturer: | Vishay Intertechnologies |
| Risk Rank: | 7.31 |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min: | 20 V |
| Drain Current-Max (Abs) (ID): | 9.8 A |
| Drain Current-Max (ID): | 9.8 A |
| Drain-source On Resistance-Max: | 0.011 Ω |
| FET Technology: | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code: | MS-012AA |
| JESD-30 Code: | R-PDSO-G8 |
| Number of Elements: | 1 |
| Number of Terminals: | 8 |
| Operating Mode: | ENHANCEMENT MODE |
| Operating Temperature-Max: | 150 °C |
| Package Body Material: | PLASTIC/EPOXY |
| Package Shape: | RECTANGULAR |
| Package Style: | SMALL OUTLINE |
| Peak Reflow Temperature (Cel): | NOT SPECIFIED |
| Polarity/Channel Type: | P-CHANNEL |
| Power Dissipation-Max (Abs): | 3 W |
| Subcategory: | Other Transistors |
| Surface Mount: | YES |
| Terminal Form: | GULL WING |
| Terminal Position: | DUAL |
| [email protected] Reflow Temperature-Max (s): | NOT SPECIFIED |
| Transistor Element Material: | SILICON |
1
1.9419
1.9419
10
1.8433
18.433
100
1.7447
174.47
500
1.6561
828.05
1000
1.5575
1557.5
