| ： | TPN1200APL,L1Q |
|---|---|
| ： | 晶体管 |
| ： | Toshiba |
| ： | MOSFET POWER MO |
| ： | - |
| ： | |
| ： | NO |
| TYPE | DESCRIPTION |
| Manufacturer: | Toshiba |
| Product Category: | MOSFET |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Id - Continuous Drain Current: | 40 A |
| Rds On - Drain-Source Resistance: | 20 mOhms |
| Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Qg - Gate Charge: | 24 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 175 C |
| Pd - Power Dissipation: | 104 W |
| Channel Mode: | Enhancement |
| Packaging: | Reel |
| Brand: | Toshiba |
| Product Type: | MOSFET |
| Factory Pack Quantity: Factory Pack Quantity: | 5000 |
| Subcategory: | MOSFETs |
1
1.62
1.62
10
1.422
14.22
100
1.096
109.6
500
0.862
431
1000
0.8
800
5000
0.68
3400
10000
0.663
6630
