: | TPHR9003NL1,LQ |
---|---|
: | 晶体管 |
: | Toshiba |
: | MOSFET UMOS8 SO |
: | - |
: | SOP-8 |
: | NO |
TYPE | DESCRIPTION |
Manufacturer: | Toshiba |
Product Category: | MOSFET |
Technology: | Si |
Mounting Style: | SMD/SMT |
Package / Case: | SOP-8 |
Transistor Polarity: | N-Channel |
Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 30 V |
Id - Continuous Drain Current: | 320 A |
Rds On - Drain-Source Resistance: | 770 uOhms |
Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage: | 2.3 V |
Qg - Gate Charge: | 74 nC |
Minimum Operating Temperature: | - |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 170 W |
Channel Mode: | Enhancement |
Packaging: | Reel |
Packaging: | Cut Tape |
Brand: | Toshiba |
Configuration: | Single |
Fall Time: | 15 ns |
Product Type: | MOSFET |
Rise Time: | 9.6 ns |
Series: | UMOS VIII-H |
Factory Pack Quantity: Factory Pack Quantity: | 5000 |
Subcategory: | MOSFETs |
Typical Turn-Off Delay Time: | 89 ns |
Typical Turn-On Delay Time: | 23 ns |
Part # Aliases: | TPHR9003NL1,LQ(M |
1
3.36
3.36
10
3.02
30.2
100
2.36
236
500
1.942
971
1000
1.437
1437
5000
1.397
6985