: | TK13P25D,RQ |
---|---|
: | 晶体管 |
: | Toshiba |
: | MOSFET PWR MOS |
: | - |
: | DPAK-3 |
: | YES |
TYPE | DESCRIPTION |
Manufacturer: | Toshiba |
Product Category: | MOSFET |
RoHS: | Details |
Technology: | Si |
Mounting Style: | SMD/SMT |
Package / Case: | DPAK-3 |
Transistor Polarity: | N-Channel |
Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 250 V |
Id - Continuous Drain Current: | 13 A |
Rds On - Drain-Source Resistance: | 250 mOhms |
Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage: | 1.5 V |
Qg - Gate Charge: | 25 nC |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 96 W |
Channel Mode: | Enhancement |
Tradename: | MOSVII |
Packaging: | Reel |
Brand: | Toshiba |
Configuration: | Single |
Fall Time: | 20 ns |
Product Type: | MOSFET |
Rise Time: | 40 ns |
Series: | TK13P25D |
Factory Pack Quantity: Factory Pack Quantity: | 2000 |
Subcategory: | MOSFETs |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 130 ns |
Typical Turn-On Delay Time: | 55 ns |
Unit Weight: | 0.012699 oz |
1
1.88
1.88
10
1.697
16.97
100
1.341
134.1
250
1.301
325.25
500
1.115
557.5
2000
0.941
1882
4000
0.903
3612
10000
0.884
8840