| ： | RN1101MFV,L3XHF(CT |
|---|---|
| ： | 晶体管 |
| ： | Toshiba |
| ： | Bipolar Transis |
| ： | - |
| ： | VESM-3 |
| ： | YES |
| TYPE | DESCRIPTION |
| Manufacturer: | Toshiba |
| Product Category: | Bipolar Transistors - Pre-Biased |
| RoHS: | Details |
| Configuration: | Single |
| Transistor Polarity: | NPN |
| Typical Input Resistor: | 4.7 kOhms |
| Typical Resistor Ratio: | 1 |
| Mounting Style: | SMD/SMT |
| Package / Case: | VESM-3 |
| DC Collector/Base Gain hfe Min: | 30 at 10 mA, 5 V |
| Collector- Emitter Voltage VCEO Max: | 50 V |
| Continuous Collector Current: | 100 mA |
| Pd - Power Dissipation: | 150 mW |
| Maximum Operating Temperature: | + 150 C |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Packaging: | MouseReel |
| Brand: | Toshiba |
| Emitter- Base Voltage VEBO: | 10 V |
| Product Type: | BJTs - Bipolar Transistors - Pre-Biased |
| Qualification: | AEC-Q200 |
| Factory Pack Quantity: Factory Pack Quantity: | 8000 |
| Subcategory: | Transistors |
| Part # Aliases: | RN1101MFV,L3XHF(CB |
1
0.7
0.7
10
0.565
5.65
100
0.301
30.1
500
0.2
100
1000
0.138
138
2500
0.103
257.5
8000
0.085
680
24000
0.082
1968
48000
0.078
3744
