| ： | DMN10H099SK3-13 |
|---|---|
| ： | Transistors |
| ： | Diodes Inc. |
| ： | Trans MOSFET N- |
| ： | - |
| ： | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| ： | YES |
| TYPE | DESCRIPTION |
| Manufacturer Part Number: | DMN10H099SK3-13 |
| Rohs Code: | Yes |
| Part Life Cycle Code: | Active |
| Ihs Manufacturer: | DIODES INC |
| Package Description: | SMALL OUTLINE, R-PSSO-G2 |
| Reach Compliance Code: | not_compliant |
| ECCN Code: | EAR99 |
| Factory Lead Time: | 23 Weeks |
| Manufacturer: | Diodes Incorporated |
| Risk Rank: | 1.63 |
| Samacsys Description: | Diodes Inc DMN10H099SK3-13 N-channel MOSFET Transistor, 17 A, 100 V, 3+Tab-Pin TO-252 |
| Additional Feature: | HIGH RELIABILITY |
| Avalanche Energy Rating (Eas): | 28.5 mJ |
| Case Connection: | DRAIN |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min: | 100 V |
| Drain Current-Max (ID): | 17 A |
| Drain-source On Resistance-Max: | 0.08 Ω |
| FET Technology: | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code: | TO-252 |
| JESD-30 Code: | R-PSSO-G2 |
| JESD-609 Code: | e3 |
| Moisture Sensitivity Level: | 1 |
| Number of Elements: | 1 |
| Number of Terminals: | 2 |
| Operating Mode: | ENHANCEMENT MODE |
| Package Body Material: | PLASTIC/EPOXY |
| Package Shape: | RECTANGULAR |
| Package Style: | SMALL OUTLINE |
| Peak Reflow Temperature (Cel): | NOT SPECIFIED |
| Polarity/Channel Type: | N-CHANNEL |
| Pulsed Drain Current-Max (IDM): | 20 A |
| Reference Standard: | AEC-Q101 |
| Surface Mount: | YES |
| Terminal Finish: | Matte Tin (Sn) |
| Terminal Form: | GULL WING |
| Terminal Position: | SINGLE |
| [email protected] Reflow Temperature-Max (s): | NOT SPECIFIED |
| Transistor Application: | SWITCHING |
| Transistor Element Material: | SILICON |
1
0.4989
0.4989
10
0.4764
4.764
100
0.444
44.4
500
0.4215
210.75
1000
0.3991
399.1
