| TYPE | DESCRIPTION |
| Manufacturer:
| MACOM |
| Product Category:
| RF MOSFET Transistors |
| RoHS: | Details |
| Transistor Polarity:
| N-Channel |
| Technology:
| Si |
| Id - Continuous Drain Current:
| 13 A |
| Vds - Drain-Source Breakdown Voltage:
| 65 V |
| Operating Frequency:
| 400 MHz |
| Gain:
| 10 dB |
| Output Power:
| 100 W |
| Minimum Operating Temperature:
| - 65 C |
| Maximum Operating Temperature:
| + 150 C |
| Package / Case:
| 333-4 |
| Packaging:
| Bulk |
| Brand: | MACOM |
| Configuration: | Single |
| Pd - Power Dissipation: | 270 W |
| Product Type: | RF MOSFET Transistors |
| Factory Pack Quantity: Factory Pack Quantity: | 20 |
| Subcategory: | MOSFETs |
| Type: | RF Power MOSFET |
| Vgs - Gate-Source Voltage: | 40 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Unit Weight: | 0.734807 oz |
