: | SCTH90N65G2V-7 |
---|---|
: | Transistors |
: | STMicroelectronics |
: | MOSFET Silicon |
: | - |
: | H2PAK-7 |
: | YES |
TYPE | DESCRIPTION |
Manufacturer: | STMicroelectronics |
Product Category: | MOSFET |
RoHS: | Details |
Technology: | SiC |
Mounting Style: | SMD/SMT |
Package / Case: | H2PAK-7 |
Transistor Polarity: | N-Channel |
Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 650 V |
Id - Continuous Drain Current: | 90 A |
Rds On - Drain-Source Resistance: | 26 mOhms |
Vgs - Gate-Source Voltage: | - 10 V, + 22 V |
Vgs th - Gate-Source Threshold Voltage: | 1.9 V |
Qg - Gate Charge: | 157 nC |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 175 C |
Pd - Power Dissipation: | 330 W |
Channel Mode: | Enhancement |
Packaging: | Reel |
Packaging: | Cut Tape |
Packaging: | MouseReel |
Brand: | STMicroelectronics |
Configuration: | Single |
Fall Time: | 16 ns |
Product Type: | MOSFET |
Rise Time: | 38 ns |
Series: | SCTH90N |
Factory Pack Quantity: Factory Pack Quantity: | 1000 |
Subcategory: | MOSFETs |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 58 ns |
Typical Turn-On Delay Time: | 26 ns |
Unit Weight: | 0.051147 oz |
1
64.36
64.36
10
59.36
593.6
25
56.7
1417.5
100
50.7
5070
500
50.34
25170
1000
50.32
50320